Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Developed for 3300V, 2300V, and 1200V SiC MOSFET products. Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module like